Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

被引：14
|
作者：
Chen, Baile [1 ]
机构：
[1] Shanghai Tech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 04期
关键词：
Dilute bismide GaAsSbBi; mid-wavelength infrared; optical gain; type-II quantum well (QW);
D O I：
10.1109/TED.2017.2665579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k.p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 Am) operation at room temperature.
引用
收藏
页码：1606 / 1611
页数：6
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