Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

被引：83
|
作者：
Roschier, L [1 ]
Penttilä, J
Martin, M
Hakonen, P
Paalanen, M
Tapper, U
Kauppinen, EI
Journet, C
Bernier, P
机构：
[1] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Hut, Finland
[2] VTT Chem Technol, Aerosol Technol Grp, FIN-02044 Vtt, Finland
[3] Univ Montpellier 2, F-34095 Montpellier, France
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期
关键词：
D O I：
10.1063/1.124495
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail. (C) 1999 American Institute of Physics. [S0003-6951(99)00131-X].
引用
收藏
页码：728 / 730
页数：3
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