Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity

被引：2
|
作者：
Kim, Bong Ho [1 ]
Kwon, Soon Hyeong [1 ]
Yoon, Hongji [1 ]
Kim, Dong Wook [1 ]
Yoon, Young Joon [1 ]
机构：
[1] Korea Inst Ceram Engn & Technol, Elect Convergence Div, Nanomat & Nanotechnol Ctr, Jinju 52851, South Korea
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2019年 / 18卷
基金：
新加坡国家研究基金会;
关键词：
2D material; transition metal dichalcogenide (TMD); MoS2; WS2; heterostructure; sputtering; electron beam irradiation (EBI); photodetector; PERFORMANCE; ABSORPTION;
D O I：
10.1109/TNANO.2019.2951599
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present study, we proposed heterostructures of MoS2 and WS2 formed by radio frequency (RF) magnetron sputtering and electron beam irradiation (EBI) for obtaining enhanced photoresponsivity. Each amorphous transition metal dichalcogenide (TMD) was sequentially deposited and EBI was performed on the as-deposited TMD heterostructures. After EBI, the atomic rearrangement of the heterostructures was studied. Moreover, the depth profile of the synthesized heterostructures was investigated using angle-resolved X-ray photoelectron spectroscopy (AR-XPS). We achieved a photoresponsivity of 5.1 A/W in EBI-treated TMD heterostructures, which was further enhanced by three orders as compared with that obtained in EBI-treated TMD single structures.
引用
收藏
页码：1200 / 1203
页数：4
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