Comments on "1.88-mΩ . cm2 1650-V Normally on 4H-SiC TI-VJFET"

被引：1
|
作者：
Veliadis, V. [1 ]
机构：
[1] Northrop Grumman Elect Syst, Linthicum, MD 21076 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 12期
关键词：
Junction field effect transistors (JFETs); normally off; normally on; silicon carbide (SiC); vertical channel; FIELD-EFFECT TRANSISTORS; TEMPERATURE; BEHAVIOR; DESIGN; IGBTS; JFETS; AREA;
D O I：
10.1109/TED.2010.2079172
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The discussion section of paper "1.88-m Omega . cm(2) 1650-V Normally on 4H-SiC TI-VJFET" which appeared in IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities.
引用
收藏
页码：3540 / 3543
页数：4
相关论文
共 50 条
  • [1] 1.88-mΩ•cm2 1650-V normally on 4H-SiC TI-VJFET
    Li, Yuzhu
    Alexandrov, Petre
    Zhao, Han H.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1880 - 1886
  • [2] Reply to Comments on "1.88-mΩ . cm2 1650-V Normally on 4H-SiC TI-VJFET"
    Li, Yuzhu
    Alexandrov, Petre
    Zhao, Jian H.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3543 - 3547
  • [3] 4,340V, 40 mΩcm2 normally-off 4H-SiC VJFET
    Zhao, JH
    Fursin, L
    Alexandrov, P
    Li, X
    Weiner, M
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1161 - 1164
  • [4] Switching performance of normally-off 4H-SiC TI-VJFET
    Munir, T.
    Raza, W.
    Naseem, S.
    Abbas, F.
    [J]. MATERIALS TODAY-PROCEEDINGS, 2015, 2 (10) : 5634 - 5637
  • [5] DC and switching performance of normally-off 4H-SiC TI-VJFET
    Munir, T.
    Fakhar-E-Alam, M.
    Raza, W.
    Abbas, Najeeb
    Atif, M.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (11-12): : 1187 - 1190
  • [6] A 2.25kV,6.1mΩ-cm2 4H-SiC Normally-Off VJFET
    Khan, A.
    Imran, A.
    Hasan, M.
    [J]. 2012 2ND INTERNATIONAL CONFERENCE ON POWER, CONTROL AND EMBEDDED SYSTEMS (ICPCES 2012), 2012,
  • [7] 1,530V, 17.5 mΩcm2 normally-off 4H-SiC VJFET design, fabrication and characterization
    Fursin, L
    Li, X
    Zhao, JH
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1157 - 1160
  • [8] 1677 V, 5.7 mΩ•cm2 4H-SiC BJTs
    Zhang, JH
    Alexandrov, P
    Zhao, JH
    Burke, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 188 - 190
  • [9] The Design of Normally-off 1300V 4H-SiC VJFET
    Chen, Gang
    Tao, Yonghong
    Bai, Song
    Liu, Ao
    Huang, Runhua
    Wang, Lin
    Li, Yun
    Zhao, Zhifei
    [J]. PROCEEDINGS OF THE 2015 6TH INTERNATIONAL CONFERENCE ON MANUFACTURING SCIENCE AND ENGINEERING, 2016, 32 : 1370 - 1373
  • [10] 1330 V, 67 mΩ • cm2 4H-SiC(0001) RESURF MOSFET
    Kimoto, T
    Kawano, H
    Suda, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 649 - 651
12345