Effect of Back Gate on Parasitic Bipolar Effect in FD SOI MOSFETs

被引：0

作者：

Liu, Fanyu ^{[1
]}

Ionica, Irina ^{[1
]}

Bawedin, Maryline ^{[2
]}

Cristoloveanu, Sorin ^{[1
]}

机构：

[1] MINATEC, IMEP LAHC, F-38016 Grenoble, France

[2] Univ Montpellier 2, F-34095 Montpellier, France

来源：

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) | 2014年

关键词：

parasitic bipolar effect; back gate; FD SOI; band-to-band tunneling; ENHANCEMENT;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In short-channel fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs, the drain leakage current is enhanced by the parasitic bipolar transistor. The parasitic bipolar effect is induced by band-to-band tunneling and floating-body effects. It strongly depends on film thickness and back-gate voltage. We show experimentally the possibility to reduce the parasitic bipolar effect by biasing the back gate (ground plane). Based on devices simulations, we discuss the origin of the bipolar action, its suppression and the possible applications.

引用

页数：2

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