Corner effect in multiple-gate SOI MOSFETs

被引：0
|
作者：
Xiong, W [1 ]
Park, JW [1 ]
Colinge, JP [1 ]
机构：
[1] SEMATECH, Austin, TX 78741 USA
来源：
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Separate formation of channels in,corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I-on/I-off ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.
引用
收藏
页码：111 / 113
页数：3
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