Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

被引：8

作者：

Solov'ev, V. A. ^{[1
]}

Chernov, M. Yu. ^{[1
]}

Mel'tser, B. Ya. ^{[1
]}

Semenov, A. N. ^{[1
]}

Terent'ev, Ya. V. ^{[1
]}

Firsov, D. D. ^{[2
]}

Komkov, O. S. ^{[2
]}

Ivanov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 10期

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1134/S1063785016100266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions have been grown for the first time by molecular beam epitaxy on GaAs (001) substrates using a graded InAlAs buffer layer with increasing In composition. The given nanoheterostructures demonstrate an intense photoluminescence at a wavelength of over of over 3 mu m (80 K), which is shifted toward longer wavelengths as compared with that of the structures without InSb insertions.

引用

页码：1038 / 1040

页数：3

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