Framework Doping of Cobalt into Layered Manganese Oxide for Improved Capacitive Behavior

被引:0
|
作者
Nakayama, M. [1 ]
Suzuki, K. [1 ]
Okamura, K. [1 ]
Athouel, L. [2 ]
Crosnier, O. [2 ]
Brousse, T. [2 ]
机构
[1] Yamaguchi Univ, Dept Appl Chem, Ube, Yamaguchi 7558611, Japan
[2] Univ Nantes, Polytech Nantes, Lab Genie Mat & Procedes Associes, F-44306 Nantes, France
基金
日本科学技术振兴机构;
关键词
THIN-FILMS; MNO2; BIRNESSITE; ELECTRODEPOSITION;
D O I
10.1149/1.3414017
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Anodic deposition of layered manganese oxides has been carried out at various bath temperatures in the presence of cobalt ions. Crystallinity of the layered Mn oxide increased with increasing the bath temperature. In the deposition of the layered Mn oxide, Co2+ ions were not involved at room temperature, while at 70 degrees C the presence of Co2+ exhibited a catalytic current suggesting the formation of Mn and Co composite. Addition of Co2+ did not provide any new diffraction peaks but caused broadening of the peaks due to Mn oxide. This indicates the introduction of Co ions into the Mn oxide sheets. Doping of Co into the Mn oxide framework caused a drastic increase in the specific capacitance.
引用
收藏
页码:183 / 191
页数:9
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