Fabrication of functional electromechanical nanowire resonators by focused ion beam implantation

被引：10

作者：

Llobet, Jordi ^{[1
]}

Gerboles, Marta ^{[1
]}

Sansa, Marc ^{[1
]}

Bausells, Joan ^{[1
]}

Borrise, Xavier ^{[2
]}

Perez-Murano, Francesc ^{[1
]}

机构：

[1] Inst Microelect Barcelona IMB CNM CSIC, Nano NEMS Grp,Campus UAB, Bellaterra 08193, Catalonia, Spain

[2] ICN2, Bellaterra 08193, Catalonia, Spain

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2015年 / 14卷 / 03期

关键词：

maskless lithography; focused ion beam; ion implantation; nanowire; mems; nanostructure; NANOMECHANICAL DEVICES; INDUCED DEPOSITION; SILICON; SPECTROMETRY; OSCILLATOR; RESOLUTION;

D O I：

10.1117/1.JMM.14.3.031207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fast and flexible fabrication method that allows the creation of silicon structures of various geometries is presented. It is based on the combination of focused ion beam local gallium implantation, selective silicon etching, and diffusive boron doping. The structures obtained by this resistless method are electrically conductive. Freely suspended mechanical resonators of different dimensions and geometries have been fabricated and measured. The resulting devices present a good electrical conductivity which allows the characterization of their high-frequency mechanical response by electrical read-out. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：6

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