SIC MESFET CLASS E MICROWAVE POWER AMPLIFIER

被引：0
|
作者：
Makarov, Denis G. [1 ]
Printsovskii, Vladimir A. [1 ]
Krizhanovski, Vladimir G. [1 ]
Kistchinsky, Andrew A. [2 ]
机构：
[1] Donetsk Natl Univ, Radio Phys Dept, 24 Univ Skaya Str, UA-83055 Donetsk, Ukraine
[2] Microwave Sys JSC, Moscow, Russia
来源：
2008 MIKON CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The simulation and experimental analysis of SiC MESFET class E power amplifier with enhanced frequency band was carried out. A specific multi-resonant output matching network was used to obtain required load impedance at the drain of transistor within desired bandwidth. The effect of transistor on-resistance on efficiency of power amplifier was considered. In the bandwidth of 800-1070 MHz output power of 2.5 W with power-added efficiency of 48% and DC supply voltage of 15 V was demonstrated
引用
收藏
页码：513 / +
页数：2
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