Assessment of compensation ratio in high-purity GaAs using photoluminescence

被引：3
|
作者：
Oelgart, G
Gramlich, S
Bergunde, T
Richter, E
Weyers, M
机构：
[1] FERDINAND BRAUN INST HOCHSTFREQEUZTECH BERLIN,D-12489 BERLIN,GERMANY
[2] UNIV LEIPZIG,FAK PHYS & GEOWISSENSCH,D-04103 LEIPZIG,GERMANY
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期
关键词：
compensation ratio; metal-organic vapor phase epitaxy; photoluminescence;
D O I：
10.1016/S0921-5107(96)01770-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The compensation ratio in high-purity n-type GaAs layers grown by metal-organic vapour phase epitaxy was determined from low-temperature photoluminescence measurements using the intensity ratio of the acceptor- and donor-bound excitonic transitions. The compensation ratio decreases with increasing V-III ratio. At high V-III ratio, a total acceptor content of below 1 x 10(13) cm(-3) is found. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：228 / 232
页数：5
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