EFFECTS OF POLYIMIDE PASSIVATION ON THE PHOTOLUMINESCENCE OF HIGH-PURITY EPITAXIAL GAAS

被引:2
|
作者
HSU, JK
LAU, KM
机构
关键词
D O I
10.1063/1.340041
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:962 / 964
页数:3
相关论文
共 50 条
  • [1] HIGH-PURITY EPITAXIAL GAAS
    AOKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (09) : 1267 - 1271
  • [2] HYDROGEN PASSIVATION OF DEEP DONOR CENTERS IN HIGH-PURITY EPITAXIAL GAAS
    PEARTON, SJ
    TAVENDALE, AJ
    ELECTRONICS LETTERS, 1982, 18 (16) : 715 - 716
  • [3] POLARITON REFLECTANCE AND PHOTOLUMINESCENCE IN HIGH-PURITY GAAS
    SELL, DD
    STOKOWSKI, SE
    DINGLE, R
    DILORENZO, JV
    PHYSICAL REVIEW B, 1973, 7 (10) : 4568 - 4586
  • [4] RESIDUAL IMPURITIES IN HIGH-PURITY EPITAXIAL GAAS
    WOLFE, DM
    STILLMAN, GE
    OWENS, EB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (01) : 129 - &
  • [5] HYDROGEN PASSIVATION OF C ACCEPTORS IN HIGH-PURITY GAAS
    PAN, N
    BOSE, SS
    KIM, MH
    STILLMAN, GE
    CHAMBERS, F
    DEVANE, G
    ITO, CR
    FENG, M
    APPLIED PHYSICS LETTERS, 1987, 51 (08) : 596 - 598
  • [6] Radiation detectors fabricated on high-purity GaAs epitaxial materials
    Wu, X.
    Kostamo, P.
    Gadda, A.
    Nenonen, S.
    Riekkinen, T.
    Harkonen, J.
    Salonen, J.
    Andersson, H.
    Zhilyaev, Y.
    Fedorov, L.
    Eranen, S.
    Mattila, M.
    Lipsanen, H.
    Prunnila, M.
    Kalliopuska, J.
    Oja, A.
    JOURNAL OF INSTRUMENTATION, 2014, 9
  • [7] Assessment of compensation ratio in high-purity GaAs using photoluminescence
    Oelgart, G
    Gramlich, S
    Bergunde, T
    Richter, E
    Weyers, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 228 - 232
  • [8] FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GAAS
    STILLMAN, GE
    WOLFE, CM
    MELNGAILIS, I
    PARKER, CD
    TANNENWALD, PE
    DIMMOCK, JO
    APPLIED PHYSICS LETTERS, 1968, 13 (03) : 83 - +
  • [9] EPITAXIAL-GROWTH OF HIGH-PURITY GAAS IN AN ARGON ATMOSPHERE
    LIN, YW
    ZHANG, YY
    LI, HL
    LIANG, JW
    LIN, LY
    JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 108 - 111
  • [10] PERSISTENT PHOTOCONDUCTIVITY IN HIGH-PURITY UNDOPED THICK EPITAXIAL GAAS
    THEIS, WM
    LITTON, CW
    MCCOY, GL
    BAJAJ, KK
    KREITMAN, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 362 - 362