A Single Mode Hybrid III-V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

被引:0
|
作者
Wang, Hai-Ling [1 ]
Zheng, Wan-Hua [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
INTEGRATED LIGHT-SOURCE; SILICON; CAVITY; PLATFORM; POWER;
D O I
10.1088/0256-307X/33/12/124207
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A single mode hybrid III-V/siliconon-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3mW, and the threshold is 37mA at room temperature and continuous wave operation.
引用
收藏
页数:4
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