Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

被引:23
|
作者
Zhang, Jin [1 ,2 ,3 ]
Zhang, Jia [1 ,2 ,3 ]
Zhou, Liujiang [4 ,5 ]
Cheng, Cai [1 ,2 ,3 ]
Lian, Chao [1 ,2 ,3 ]
Liu, Jian [1 ,2 ,3 ]
Tretiak, Sergei [4 ,5 ]
Lischner, Johannes [6 ,7 ,8 ]
Giustino, Feliciano [9 ]
Meng, Sheng [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[4] Los Alamos Natl Lab, Theoret Div, Ctr Nonlinear Studies, Los Alamos, NM 87545 USA
[5] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[6] Imperial Coll London, Dept Mat, London SW7 2AZ, England
[7] Imperial Coll London, Dept Phys, London SW7 2AZ, England
[8] Imperial Coll London, Thomas Young Ctr Theory & Simulat Mat, London SW7 2AZ, England
[9] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
基金
中国国家自然科学基金;
关键词
Bloch-Gruneisen model; borophene; electron-phonon coupling; intrinsic electrical resistivity; BORON;
D O I
10.1002/anie.201800087
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch-Gruneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch-Gruneisen temperature is nearly fixed at 100K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.
引用
收藏
页码:4585 / 4589
页数:5
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