Microstructure and contact resistivity of (Bi, Sb)2Te3/Sb interface

被引：8
|
作者：
Li, Fei [1 ,2 ]
Huang, Xiangyang [1 ]
Jiang, Wan [3 ]
Chen, Lidong [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
[2] Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Donghua Univ, Coll Mat Sci & Engn, Shanghai 200051, Peoples R China
来源：
9TH EUROPEAN CONFERENCE ON THERMOELECTRICS (ECT2011) | 2012年 / 1449卷
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Thermoelectric; Interlayer; Antimony; Contact resistivity; ANTIMONY TELLURIDE; ALLOYS; POWER;
D O I：
10.1063/1.4731595
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermoelectric joint composed of Bi0.5Sb1.5Te3 (BiSbTe) material and antimony (Sb) metallic interlayer was fabricated by Spark Plasma Sintering. The reliability of the joints was investigated by interfacial microstructure evolution using electron probe micro-analysis for the samples with different accelerated isothermal aging time. After aging for 30 days in vacuum, the thickness of diffusion layer is about 50 mu m. Sb2Te3 was identified to be the major interfacial compound. The contact resistivity, depending on the thickness of interfacial compound, is 3 x 10(-6) ohm cm(2) before aging and increases to 8.5 x 10(-6) ohm cm(2) after aging for 30 days. The contact resistivity of thermoelectric material/Sb interface is very small as compared to that of solder alloys as interlayer. This study provides a new interlayer-Sb to be used in the bismuth telluride based thermoelectric module.
引用
收藏
页码：458 / 462
页数：5
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