The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region

In this paper, a comparison of different floating junction structure underneath the termination region FJ(t) for 4H-SiC FJ_JBS is performed by simulations and experiments. The simulated results indicate that the optimized dose of FJ(t) is different when the different FJ(t) structures are chosen, which is resulting from different work mechanism. The experimental results show that the breakdown voltage of FJ_JBS with discontinuous floating junction structure underneath the termination region is 2.9 kV. For comparison, the FJ_JBS with continuous floating junction structure without fixed outer boundary underneath the termination only achieves a breakdown voltage of 2.05 kV, which validates the simulation results.