Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

被引：26
|
作者：
Niwa, Hiroki [1 ]
Feng, Gan
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 10期
基金：
日本学术振兴会;
关键词：
Interface charge; junction termination extension (JTE); PiN diode; silicon carbide (SiC); POWER DEVICES; EXTENSION; DESIGN;
D O I：
10.1109/TED.2012.2210044
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
15-kV-class 4H-SiC PiN diodes with various junction termination structures have been experimentally investigated. Employment of the space-modulated junction termination extension (SM-JTE) and the two-zone JTE have realized a breakdown voltage over 15 kV, corresponding to 93% of the parallel-plane breakdown voltage. The window of the implanted JTE dose to achieve the ultrahigh voltage has been enlarged, which indicates the robustness to the deviation of effective JTE dose. From the comparison of the experimental JTE-dose dependence of breakdown voltage with the numerical device simulation, a shift toward the heavier JTE-dose region was observed. To explain the phenomenon, effects of the charges at the SiO2/SiC interface are discussed.
引用
收藏
页码：2748 / 2752
页数：5
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