Optical properties of (Mn, Co) co-doped ZnO films prepared by dual-radio frequency magnetron sputtering

被引：27

作者：

Gu, Zheng-bin

Lu, Ming-hui

Wang, Jing

Du, Chao-ling

Yuan, Chang-sheng

Wu, Di

Zhang, Shan-tao

Zhu, Yong-yuan

Zhu, Shi-ning

Chen, Yan-feng ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

关键词：

sputtering; zinc oxide; doped II-VI semiconductor; optical properties;

D O I：

10.1016/j.tsf.2006.04.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dual-radio frequency magnetron sputtering was employed to prepare (Mn, Co) co-doped ZnO films on sapphire (0001). X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the films are highly c-axis oriented and the doped Mn and Co ions in films are both in the divalent states. A dominant photoluminescence peak was observed at the wavelength of 405 nm. Ultraviolet-Visible absorption spectra show band gaps of 2.80, 2.90, 3.27, and 3.22 eV for (Mn-0.02, Co-0.04) Zn0.94O, Zn0.90Co0.10, Zn0.97Mn0.03O and ZnO films, respectively. A red-shift more than 500 meV was observed in a (Mn, Co) co-doped ZnO film. The Raman spectra measurement of (Mn, Co)ZnO films revealed additional vibrational modes at 276.6, 525.6, 634.6, and 643.9 cm(-1) compared to the host phonons of ZnO. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2361 / 2365

页数：5

共 50 条

[1] Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering
Liu F.
Dai M.-J.
Lin S.-S.
Shi Q.
Sun H.
Sun, Hui (huisun@sdu.edu.cn), 1600, Science Press (43): : 385 - 391
[2] Optical and electrical properties of (Al, V) co-doped ZnO films prepared by RF magnetron sputtering
Zheng, Jia Hong
Niu, Shi Feng
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (9-10): : 849 - 853
[3] Structural, optical, and magnetic properties of Co-doped CeO2 thin films prepared by radio-frequency magnetron sputtering
Yang, Shenghong
Zhang, Yueli
SURFACE AND INTERFACE ANALYSIS, 2023, 55 (05) : 364 - 372
[4] Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering
Wu, Yongheng
Li, Cuiping
Li, Mingji
Li, Hongji
Xu, Sheng
Wu, Xiaoguo
Yang, Baohe
CERAMICS INTERNATIONAL, 2016, 42 (09) : 10847 - 10853
[5] Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering
Jo, Young Dae
Hui, K. N.
Hui, K. S.
Cho, Y. R.
Kim, Kwang Ho
MATERIALS RESEARCH BULLETIN, 2014, 51 : 345 - 350
[6] Structural, optical and magnetic properties of Co and Fe doped ZnO thin films grown by radio frequency magnetron sputtering
Angelats, Luis M.
Tomar, Maharaj S.
Singhal, Rahul
Perez, Oscar P.
Jimenez, Hector J.
Martinez, Ricardo
ZINC OXIDE AND RELATED MATERIALS, 2007, 957 : 423 - +
[7] Physical properties of Cu and Dy co-doped ZnO thin films prepared by radio frequency magnetron sputtering for hybrid organic/inorganic electronic devices
Locovei, C.
Coman, D.
Radu, A.
Ion, L.
Antohe, V. A.
Vasile, N.
Dumitru, A.
Iftimie, S.
Antohe, S.
THIN SOLID FILMS, 2019, 685 : 379 - 384
[8] Effect of substrate temperature on F and Al co-doped ZnO films deposited by radio frequency magnetron sputtering
Wang, Yanfeng
Song, Jianmin
Zhang, Jie
Zheng, Guoxi
Duan, Xiaochen
Xie, Xicheng
Han, Bing
Meng, Xudong
Yang, Fu
Wang, Guangcai
Zhao, Ying
Li, Junjie
SOLAR ENERGY, 2019, 194 : 471 - 477
[9] Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering
Ma, Ligang
Ma, Shuyi
Chen, Haixia
Ai, Xiaoqian
Huang, Xinli
APPLIED SURFACE SCIENCE, 2011, 257 (23) : 10036 - 10041
[10] Structural characterization and optoelectrical properties of Ti–Ga co-doped ZnO thin films prepared by magnetron sputtering
Z. Lu
L. Long
Z. Zhong
C. Lan
Journal of Materials Science: Materials in Electronics, 2016, 27 : 2875 - 2884

← 1 2 3 4 5 →