InP-based resonant tunnelnig diode/HEMT integrated circuits for ultrahigh-speed operation

被引：0
|
作者：
Maezawa, Koichi [1 ]
Mizutani, Takashi [1 ,2 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 464-8603, Japan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The RTDs feature strong nonlinear I-V characteristics exhibiting negative differential resistance as well as an extremely high operation frequency. This paper discusses the RTD/HEMT integration circuits and their applications based on our recent results. In addition to this, a novel integration technology, called fluidic self-assembly (FSA), for integration of III-V RTDs on other substrate, is also described. This technique is promising for expanding the applicability of the RTDs.
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页码：253 / +
页数：2
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