Time and Frequency Domain Characterization of Transistor Self-Heating

被引：40
|
作者：
Makovejev, Sergej [1 ,2 ]
Olsen, Sarah H. [1 ]
Kilchytska, Valeriya [2 ]
Raskin, Jean-Pierre [2 ]
机构：
[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 06期
基金：
英国工程与自然科学研究理事会;
关键词：
Pulsed I-V; RF; self-heating; silicon on insulator (SOI); STRAINED SI MOSFETS; SOI MOSFETS; EXTRACTION; CONDUCTANCE; TEMPERATURE; TRANSPORT; DEGRADATION; RELIABILITY; SIMULATION; RESISTANCE;
D O I：
10.1109/TED.2013.2259174
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.
引用
收藏
页码：1844 / 1851
页数：8
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