Quantum breakdown of superconductivity in low-dimensional materials

被引:88
|
作者
Sacepe, Benjamin [1 ]
Feigel'man, Mikhail [2 ,3 ]
Klapwijk, Teunis M. [4 ,5 ,6 ]
机构
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, Grenoble, France
[2] LD Landau Inst Theoret Phys, Chernogolovka, Russia
[3] Skolkovo Inst Sci & Technol, Moscow, Russia
[4] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands
[5] Julius Maximilian Univ Wurzburg, Inst Topol Mat, Wurzburg, Germany
[6] Moscow State Univ Educ, Dept Phys, Moscow, Russia
基金
欧洲研究理事会; 俄罗斯科学基金会;
关键词
INSULATOR TRANSITION; ANDERSON LOCALIZATION; PHASE-TRANSITIONS; DISORDERED SUPERCONDUCTORS; ZERO-TEMPERATURE; BEHAVIOR; METAL; FILMS; FLUCTUATIONS; SUPPRESSION;
D O I
10.1038/s41567-020-0905-x
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The breakdown of superconductivity is described as a reduction in the amplitude of the order parameter or a breakdown in phase coherence of Cooper pairs. This Review Article highlights recent results that show both mechanisms may be at play simultaneously. In order to understand the emergence of superconductivity it is useful to study the reverse process and identify the various pathways that lead to its destruction. One way is to increase the amount of disorder, as this leads to an increase in Coulomb repulsion that overpowers the attractive interaction responsible for Cooper pair formation. A second pathway-applicable to uniformly disordered materials-is to utilize the competition between superconductivity and Anderson localization, as this leads to electronic granularity in which phase and amplitude fluctuations of the superconducting order parameter play a role. Finally, a third pathway is to construct an array of superconducting islands coupled by some form of proximity effect that leads from a superconducting state to a state with finite resistivity, which appears like a metallic groundstate. This Review Article summarizes recent progress in understanding of these different pathways, including experiments in low dimensional materials and application in superconducting quantum devices.
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页码:734 / 746
页数:13
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