Linear Analysis of Phase Noise in LC oscillators in Deep Submicron CMOS Technologies

被引：0

作者：

Chicco, Francesco ^{[1
]}

Capoccia, Raffaele ^{[1
]}

Pezzotta, Alessandro ^{[1
]}

Enz, Christian ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, ICLAB, Lausanne, Switzerland

来源：

2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2017年

关键词：

LC oscillators; phase noise; linear analysis; inversion coefficient; MOSFET; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the phase noise in LC oscillators with NMOS cross-coupled pair by means of a linear analysis. The latter includes the impact of noise sources that are often neglected, such as gate leakage shot noise, induced gate noise and all terminal access resistances noise. Despite not considering up-conversion of flicker noise, this linear analysis still provides reliable and useful results, demonstrated by means of a detailed comparison between the analytical description and simulations results from a 40 nm and a 28 nm CMOS technology.

引用

页数：4

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