The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

被引：22

作者：

Li, T. ^{[1
]}

Wei, Q. Y. ^{[1
]}

Fischer, A. M. ^{[1
]}

Huang, J. Y. ^{[1
]}

Huang, Y. U. ^{[1
]}

Ponce, F. A. ^{[1
]}

Liu, J. P. ^{[2
,3
]}

Lochner, Z. ^{[2
,3
]}

Ryou, J. -H. ^{[2
,3
]}

Dupuis, R. D. ^{[2
,3
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 04期

关键词：

UNDERLYING LAYERS; EFFICIENCY; SINGLE;

D O I：

10.1063/1.4789758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789758]

引用

页数：4

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