Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films

被引：25
|
作者：
Zhang, Qun [1 ]
Li, Xifeng [1 ]
Li, Guifeng [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Tungsten-doped indium oxide; Reactive magnetron sputtering; Film thickness; Electrical properties and measurements; Optical properties;
D O I：
10.1016/j.tsf.2008.07.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tungsten-doped indium oxide (IWO) thin films were prepared by reactive magnetron sputtering method. The dependence of optical and electrical properties on the thickness of IWO films was investigated. X-ray diffraction analysis indicates that the preferential orientation of IWO films varies from (111) to (100) with the increase of the thickness. The carrier mobility and resistivity are sensitive to the film thickness at a range of 50-150 nm. A sample with electrical resistivity of 2.7 x 10(-4) Omega cm, carrier mobility of 49 cm(2) V(-1) s(-1), and transmission at the visible region of more than 80% was obtained. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：613 / 616
页数：4
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