Generalized Tight-Binding Method for Correlated-Electron Structure in Transition-Metal Oxides

被引：0

作者：

Gavrichkov, V. A. ^{[1
]}

Ovchinnikov, S. G. ^{[1
]}

Yakimov, L. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

来源：

PHYSICS OF METALS AND METALLOGRAPHY | 2005年 / 100卷

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

We develop a generalized tight-binding method to carry out a comparative study of the band structure of the transition-metal oxides (LaSr)MnO3 and (LaSr)(2)CuO4. In both materials, we observe in-gap states separated by a subgap from the top of the valence band. The subgap appears in the antiferromagnetic (AFM) phase of the copper oxides and in the paramagnetic (PM) phase of the manganites containing structural distortions. The method suggested permits us to reproduce the dispersion relation near the top of the valence band of both the materials.

引用

页码：S104 / S107

页数：4

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