The introduction of oxygenous functional groups onto graphene can provide additional pseudocapacitance for supercapacitors. However, how to balance the amount of introduced oxygenous functional groups and the reduced electrical conductivity arising from the disruption of the conjugated system remains a big challenge. Here, a controllable strategy is reported to prepare moderately oxidized reduced graphene oxide (MORGO) via an electrochemical oxidation process. The MORGO not only has oxygenous groups with appropriate quantities, but also preserves the highly crystalline structure of the - conjugated carbon framework. As a result, the MORGO films showed superior electrochemical properties to the pristine RGO films and other previously reported RGO films. Furthermore, the oxygenous groups and the conductivity of MORGO films can be easily adjusted by controlling the oxidation time. A hierarchical composite of NiCo-layered double hydroxide nanosheet arrays on MORGO films (MORGO/NiCo-LDH) was also constructed via electrochemical deposition to combine the advantages of electric double-layer electrode materials and faradaic electrode materials. The flexible solid-state supercapacitor fabricated with MORGO/NiCo-LDH film electrodes exhibits a high energy density (0.51 mW h cm(-3)), as well as a long cycle life (88.2% capacitance retention after 10000 cycles).
机构:
North China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R ChinaNorth China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R China
Cao, Yong
Li, Guoting
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North China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R ChinaNorth China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R China
Li, Guoting
Li, Xinbao
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North China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R ChinaNorth China Univ Water Resources & Elect Power, Inst Environm & Municipal Engn, Zhengzhou 450045, Peoples R China
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Columbia Univ, Dept Earth & Environm Engn, Ctr Adv Mat Energy & Environm, Earth Engn Ctr, New York, NY 10027 USAColumbia Univ, Dept Earth & Environm Engn, Ctr Adv Mat Energy & Environm, Earth Engn Ctr, New York, NY 10027 USA
Lu, Chao
Chen, Xi
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Columbia Univ, Dept Earth & Environm Engn, Ctr Adv Mat Energy & Environm, Earth Engn Ctr, New York, NY 10027 USAColumbia Univ, Dept Earth & Environm Engn, Ctr Adv Mat Energy & Environm, Earth Engn Ctr, New York, NY 10027 USA
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Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Zhao, Xiang
Li, Hui
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Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Li, Hui
Zhang, Mu
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Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Foshan Grad Sch Northeastern, Foshan 528311, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Zhang, Mu
Pan, Wei
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Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Pan, Wei
Luo, Zhengtang
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Hong Kong Univ Sci & Technol, Dept Chem & Biol Engn, Hong Kong 999077, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Luo, Zhengtang
Sun, Xudong
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Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China