Low temperature sintering and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics for LTCC applications

被引:41
|
作者
Zou, Dong [1 ]
Zhang, Qilong [1 ]
Yang, Hui [1 ]
Li, Shaochun [1 ]
机构
[1] Zhejiang Univ, Coll Mat Sci & Chem Engn, Hangzhou 310027, Zhejiang, Peoples R China
关键词
dielectric properties; sintering; LTCC; Ba2Ti3Nb4O18;
D O I
10.1016/j.jeurceramsoc.2008.04.021
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of MnCO3-CuO and Li2O-B2O3-SiO2 (for short LBS) on the sintering behavior, microstructures and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics have been investigated. The pure Ba2Ti3O4O18 ceramics sintered at 1220 degrees C showed microwave dielectric properties: epsilon(r) = 38, Q x f = 23,700 GHz (at 4.8 GHz), and tau(f) = -3 ppm/degrees C. It was found that a small amount of MnCO3-CuO and LBS glass additives lowered the sintering temperature of Ba2Ti3Nb4O18 ceramics effectively from 1220 degrees C to 900 degrees C. The dielectric constant (epsilon(r)) increased and the temperature coefficient of the resonant frequency shifted to a positive value with the addition of MnCO3-CuO and LBS, which were mainly due to the presence of the second phase Ba3Ti4Nb4O21. Ba2Ti3Nb4O18 ceramics with 1.5 wt% MnCO3-CuO and 0.5 wt% LBS sintered at 900 degrees C for 2 h showed dielectric properties: epsilon(r) = 41, Q x f = 15,000 GHz (at 4.8 GHz), and tau(f) = 4 ppm/degrees C. It was compatible with Ag electrodes, which made it a promising ceramic for low temperature co-fired ceramics technology application. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2777 / 2782
页数:6
相关论文
共 50 条
  • [41] Microwave dielectric properties of Ba2Ti3Nb4O18 ceramic doped with ZnO-B2O3-SiO2 glass and its compatibility with silver electrode
    Liu, Xiaobin
    Zhou, Huanfu
    Chen, Xiuli
    Fang, Liang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2012, 23 (02) : 640 - 644
  • [42] Low temperature sintering and dielectric properties of Li2MgTiO4 microwave ceramics with BaCu(B2O5) addition for LTCC applications
    Gu, Yong-jun
    Yang, Xing-hua
    Wang, Xiao
    Huang, Jin-liang
    Li, Qian
    Li, Li-hua
    Li, Xin-li
    Kim, Bok-hee
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (19) : 18025 - 18030
  • [43] Low temperature sintering and dielectric properties of Li2MgTiO4 microwave ceramics with BaCu(B2O5) addition for LTCC applications
    Yong-jun Gu
    Xing-hua Yang
    Xiao Wang
    Jin-liang Huang
    Qian Li
    Li-hua Li
    Xin-li Li
    Bok-hee Kim
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 18025 - 18030
  • [44] Low-temperature sintering and microwave dielectric characteristics of Ba2Ti9O20 ceramics
    Lee, Jung-A.
    Lee, Joon-Hyung
    Kim, Jeong-Joo
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (10-11) : 2111 - 2115
  • [45] Microwave dielectric properties and low temperature sintering of the ZnO-V2O5 doped Ba3Ti2(Mg1/3Nb2/3)2Nb4O21 ceramics
    Zhang, Chen
    Zuo, Ruzhong
    Sun, Qian
    Hu, Zhongwen
    Zhang, Jinjin
    CERAMICS INTERNATIONAL, 2013, 39 (05) : 5675 - 5679
  • [46] Low-temperature sintering of Mg4Nb2O9 microwave dielectric ceramics
    Yao, Guoguang
    Pei, Cuijin
    Tian, Xiulao
    Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society, 2009, 37 (06): : 1017 - 1021
  • [47] Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with B2O3 and CuO additions
    Kim, Jeong-Ryeol
    Kim, Dong-Wan
    Yoon, Sung Hun
    Hong, Kug Sun
    JOURNAL OF ELECTROCERAMICS, 2006, 17 (2-4) : 439 - 443
  • [48] Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with B2O3 and CuO additions
    Jeong-Ryeol Kim
    Dong-Wan Kim
    Sung Hun Yoon
    Kug Sun Hong
    Journal of Electroceramics, 2006, 17 : 439 - 443
  • [50] Microwave dielectric properties of Ba2Ti3Nb4O18 ceramic doped with ZnO–B2O3–SiO2 glass and its compatibility with silver electrode
    Xiaobin Liu
    Huanfu Zhou
    Xiuli Chen
    Liang Fang
    Journal of Materials Science: Materials in Electronics, 2012, 23 : 640 - 644