An RF Receiver for Multi-Band Inter- and Intra-Band Carrier Aggregation

被引：0

作者：

Kim, Youngmin ^{[1
]}

Jang, Pilsung ^{[1
]}

Han, Junghwan ^{[1
]}

Shin, Heeseon ^{[1
]}

Ahn, Suseob ^{[1
]}

Kwon, Daehyun ^{[1
]}

Choi, Jaewon ^{[1
]}

Kang, Sanghoon ^{[1
]}

Heo, Seungchan ^{[1
]}

Cho, Thomas Byunghak ^{[1
]}

机构：

[1] Samsung Semicond, Hwaseong Si, South Korea

来源：

2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2016年

关键词：

CMOS; carrier aggregation; low-noise amplifier; LTE; RF receiver; transformers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An RF receiver for carrier aggregation employing a low noise amplifier with a current reusing technique and a frequency-band switchable transformer is demonstrated in a 28nm LP CMOS technology. The proposed single-ended low-noise amplifier can support multiple-channel RF signals for both inter-and intra-band carrier aggregation with high performance and low DC current consumption. Moreover, a frequency-band switchable transformer is developed to realize a size-efficient receiver for handling three carrier components carrier aggregation. The receiver operates at frequency bands, ranging from 0.7 to 2.7 GHz. The receiver has conversion gain more than 70 dB and noise figure of less than 3.5 dB for all carrier aggregation combinations.

引用

页码：79 / 82

页数：4

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