An Energy-Efficient Last-Level Cache Architecture for Process Variation-Tolerant 3D Microprocessors

被引:6
|
作者
Kong, Joonho [1 ]
Koushanfar, Farinaz [2 ]
Chung, Sung Woo [3 ]
机构
[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea
[2] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
[3] Korea Univ, Dept Comp & Radio Commun Engn, Seoul 136713, South Korea
基金
美国国家科学基金会; 新加坡国家研究基金会;
关键词
3D microprocessor; last-level cache; leakage energy optimization; narrow-width value; process variation; yield; YIELD MANAGEMENT; DESIGN;
D O I
10.1109/TC.2014.2378291
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
As process technologies evolves, tackling process variation problems is becoming more challenging in 3D (i.e., die- stacked) microprocessors. Process variation adversely affects performance, power, and reliability of the 3D microprocessors, which in turn results in yield losses. In particular, last-level caches (LLCs: L2 or L3 caches) are known as the most vulnerable component to process variation in 3D microprocessors. In this paper, we propose a novel cache architecture that exploits narrow-width values for yield improvement of LLCs (in this paper, L2 caches) in 3D microprocessors. Our proposed architecture disables faulty cache subparts and turns on only the portions that store meaningful data in the cache arrays, which results in high energy- efficiency as well as high cache yield. In an energy-/performance-efficient manner, our proposed architecture significantly recovers not only SRAM cell failure-induced yield losses but also leakage-induced yield losses.
引用
收藏
页码:2460 / 2475
页数:16
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