Ferroelectric Properties and Microstructures of La2O3-doped Bi4Ti3O12 Ceramics

被引：0
|
作者：
Huang, C. Q. [1 ]
Chen, M. [1 ]
Mei, X. A. [1 ]
Sun, Y. H. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷
关键词：
ferroelectric; film; bismuth titanate; THIN-FILMS;
D O I：
10.4028/www.scientific.net/AMR.412.302
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of La-doped bismuth titanate, Bi4-xLaxTi3O12 (BLT) ceramics prepared by a conventional electroceramic technique have been investigated. XRD analyses revealed Bi-layered perovskite structure in all samples, and indicted that Bi ions were only substituted near the Ti-O octahedron layers by La ions. SEM micrographs show randomly oriented and plate-like morphology. The remanent polarization (P-r) and coercive field (E-c) of the BLT ceramic with x=0.75 were above 19 mu C/cm(2) and 60KV/cm, respectively. The large value of remanent polarization and low coercive field of La-doped bismuth titanate ceramics promote these materials to potential applications.
引用
收藏
页码：302 / 305
页数：4
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