Electrical Characteristics and Microstructures of Ce2O3-doped Bi4Ti3O12 Ceramics

被引：1
|
作者：
Chen, M. [1 ]
Mei, X. A. [1 ]
Cai, A. H. [1 ]
Liu, J. [1 ]
Huang, C. Q. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Dept Phys, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷
关键词：
ferroelectric; film; bismuth titanate; doping; LARGE REMANENT POLARIZATION; BI4-XLAXTI3O12; THIN-FILMS; BISMUTH TITANATE; DOPED BI4TI3O12; FATIGUE;
D O I：
10.4028/www.scientific.net/AMR.412.298
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Ce-doped bismuth titanate, Bi4-xCexTi3O12 (BCT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (P-r) and coercive field (E-c) of the BCT ceramic with x=0.8 were above 20 mu C/cm(2) and 60KV/cm, respectively.
引用
收藏
页码：298 / 301
页数：4
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