Many-body optical gain with piezoelectric effects of wurtzite and zinc-blende GaN AlGaN quantum well lasers

被引:0
|
作者
Park, SH [1 ]
机构
[1] Catholic Univ Taegu Hyosung, Dept Phys, Kyeongsan 712702, South Korea
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic and the optical properties of (0001)-oriented wurtzite (WZ) GaN/AlGaN quantum-well (QW) lasers with the piezoelectric (PZ) effects taken into account are investigated. These results are compared with those of (001)-oriented zinc-blende (ZB) GaN/AlGaN QW lasers. The self-consistent (SC) model with the PZ effects shows that the many-body optical gain of (0001)-oriented WZ QW lasers is greatly reduced by the PZ field and that WZ QWs have significantly larger threshold carrier densities than ZB QWs. However, when the optical gain is plotted as a function of the radiative current density J(rad), it is found that there is no significant difference between the results of the flat-band (FB) model without the PZ effects and the SC model and between the results for ZB and WZ QWs. These can be explained by the fact that the many-body optical gain and the radiative recombination coefficient B-eff simultaneously decrease with the PZ field and the fact that ZB QWs have larger optical gain and B-eff than WZ QWs, respectively. Also, it is shown that the differential gain of WZ QWs has a large decrease due to a reduction in the matrix elements with the PZ field.
引用
下载
收藏
页码:35 / 41
页数:7
相关论文
共 50 条
  • [21] Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot
    Wang Yan-Wen
    Wu Hua-Rui
    ACTA PHYSICA SINICA, 2012, 61 (10)
  • [22] Optical anisotropy in (110)-oriented zinc-blende GaN/AlGaN quantum wells
    Park, S. H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)
  • [23] Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
    Park, SH
    Chuang, SL
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 353 - 364
  • [24] Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
    Jacopin, G.
    Rigutti, L.
    Largeau, L.
    Fortuna, F.
    Furtmayr, F.
    Julien, F. H.
    Eickhoff, M.
    Tchernycheva, M.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [25] Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well
    Xia, Congxin
    Zhu, Yanping
    Wei, Shuyi
    PHYSICS LETTERS A, 2011, 375 (27) : 2652 - 2655
  • [26] Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser
    Fan, WJ
    Li, MF
    Chong, TC
    Xia, JB
    SOLID STATE COMMUNICATIONS, 1996, 98 (08) : 737 - 740
  • [27] Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot
    Xia, Congxin
    Jiang, Fengchun
    Wei, Shuyi
    Zhao, Xu
    MICROELECTRONICS JOURNAL, 2007, 38 (6-7) : 663 - 666
  • [28] Many-body optical gain of strained GaAsSb/GaAs quantum well lasers
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (06) : 1427 - 1431
  • [29] Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration
    Park, Seoung-Hwan
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (06)
  • [30] Many-body optical gain of InGaNAs/GaAsN quantum-well lasers
    Kim, HM
    Kim, JJ
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (03) : 525 - 528