Initial growth processes of Ag on polar and non-polar semiconductor substrates

被引：1
|
作者：
Ohtake, A
Nakamura, J
Osaka, T
机构：
[1] WASEDA UNIV,DEPT MAT SCI & ENGN,SHINJUKU KU,TOKYO 169,JAPAN
[2] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN
来源：
SURFACE SCIENCE | 1997年 / 380卷 / 01期
关键词：
growth; indium antimonide; metal-semiconductor interface; tin;
D O I：
10.1016/S0039-6028(97)00019-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Initial growth processes of Ag on both InSb(lll)A and alpha-Sn(lll) substrates at room temperature have been investigated by using reflection high-energy electron diffraction and Auger electron spectroscopy. The results show that the growth features are quite different for each system: Ag grows in the Stranski-Krastanov mode on InSb(lll)A, while for Ag/alpha-Sn(lll) the majority of the deposited Ag atoms are consumed in forming an Ag-Sn alloy. Discrete variational-X alpha calculations showed that an onset of such growth modes is closely related to interfacial chemical bonding features for both systems.
引用
收藏
页码：L437 / L440
页数：4
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