A Programmable and Low-Area On-Die Termination for High-Speed Interfaces

被引:0
|
作者
Dovale, Luisa [1 ]
Sebastian Moya, Juan [1 ]
Roa, Elkim [1 ]
机构
[1] Univ Ind Santander, Integrated Syst Res Grp OnChip, Bucaramanga, Colombia
关键词
Matching network; electromigration; ESD events; resistance terminations; on-die terminations;
D O I
10.1109/lascas.2019.8667552
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Although much progress has been made over the years in high-speed I/O, there is no comprehensive characterization of their termination design. In contrast to the widespread notion that a programmable termination might not offer any challenge, electromigration in conjunction with ESD compliance and programmability demand considerable attention during the termination design. Here we combine a design methodology and circuit techniques to address the hinted challenges. Overall, our study provides a comprehensive characterization on the design of a 35 Omega-to-65 Omega matching network. As a result, this paper presents a programmable ESD-compliant on-die termination occupying an area of 0.03mm(2) on a standard 180nm CMOS with a maximum worst case of 7.14mA static current consumption.
引用
收藏
页码:173 / 176
页数:4
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