GaN FETs for microwave and high-temperature applications

被引：129
|
作者：
Binari, SC
Doverspike, K
Kelner, G
Dietrich, HB
Wickenden, AE
机构：
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期
关键词：
D O I：
10.1016/S0038-1101(96)00161-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The d.c., microwave, and high-temperature characteristics of Si-doped MESFETs with and without n(+) ohmic contact layers, Si3N4/GaN MISFETs, and AIN/GaN HFETs are presented. The highest transconductance and microwave performance were observed for 1 mu m gate-length HFETs. These HFETs have a transconductance of 45 mS/mm, an f tau of 8 GMz, and an f(max) of 22 GHz. The Si-doped MESFETs have good pinch-off characteristics at 400 degrees C and are operational at 500 degrees C.
引用
收藏
页码：177 / 180
页数：4
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