Slip propagation in epitaxial Mo (011) studied by low-energy electron microscopy

被引：6
|
作者：
Mundschau, M
Swiech, W
Durfee, CS
Flynn, CP
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
来源：
SURFACE SCIENCE | 1999年 / 440卷 / 1-2期
关键词：
epitaxy; low-energy electron microscopy (LEEM); low index single crystal surfaces; molybdenum; surface defects; surface structure;
D O I：
10.1016/S0039-6028(99)00828-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report observations of slip processes in epitaxial films of Mo (011) grown on sapphire by molecular beam epitaxy. Low-energy electron microscopy is employed to follow the time evolution of the screw dislocation, the interfacial dislocation, and the surface step edge structure through which the slip takes place. Under certain conditions the dislocation system is observed to trap briefly as it meets successive surface steps. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L831 / L834
页数：4
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