Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

被引:12
|
作者
Cole, Matthew T. [1 ,2 ]
Milne, William I. [1 ,3 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
[2] AIXTRON Ltd, Cambridge CB24 4FQ, England
[3] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
关键词
carbon nanotube; in situ horizontal alignment; plasma enhanced chemical vapor deposition; electric field; FIELD-EMISSION; GROWTH; LONG; GRAPHOEPITAXY; TEMPERATURE; ALIGNMENT; SPARSE; ARRAYS;
D O I
10.3390/ma6062262
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child's law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V mu m(-1) with linear packing densities of up to similar to 5 x 10(4) cm(-1). These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.
引用
收藏
页码:2262 / 2273
页数:12
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