Prepared and Surface Analyzed of Nano-silicon Nitride Thin Films

被引：0

作者：

Yu Gui-wen ^{[1
]}

Dong Jing ^{[1
]}

Tian Ye ^{[1
]}

Li Wen-xin ^{[1
]}

Gong Xue ^{[1
]}

机构：

[1] Harbin Commerce Univ, Harbin 150028, Peoples R China

来源：

FUNDAMENTAL OF CHEMICAL ENGINEERING, PTS 1-3 | 2011年 / 233-235卷

关键词：

Silicon nitride; r.f. reactive sputtering; chemical stoichiometric; RBS; XPS;

D O I：

10.4028/www.scientific.net/AMR.233-235.2015

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

引用

页码：2015 / 2018

页数：4

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