4H-SiC Semiconductor based Metal Oxide Semiconductor Devices

For the high saturated electron drift velocity, high breakdown field, high thermal conductivity, and wide bandgap Silicon Carbide (SiC) is considered recently as the promising semiconductor material to fabricate the high power, compact, high temperature and high frequency metal oxide semiconductor (MOS). devices. In this paper we simulate the capacitance-voltage (C-V) characteristics of MOS devices with thin oxide using ATLAS, TCAD suite by SILVACO. We have used the tool to investigate the effect on C-V characteristics of different oxide thickness and doping concentration for silicon (Si) and 4H-SiC semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the SiC material. The C-V characteristics of different polytype of SiC (4H-, 6H- and 3C-) semiconductor are simultaneously studied for MOS devices.