Preparation of Copper Iodide (CuI) Thin Film by In-Situ Spraying and Its Properties

被引:10
|
作者
Rahmi, G. H. [1 ]
Pratiwi, P. [1 ]
Nuryadi, B. W. [2 ]
Aimon, A. H. [1 ]
Winata, T. [1 ]
Iskandar, F. [1 ,3 ]
机构
[1] Inst Teknol Bandung, Dept Phys, Phys Elect Mat Res Div, Bandung 40132, Indonesia
[2] UIN Sunan Gunung Djati, Dept Phys, Fac Sci & Technol, Bandung 40614, Indonesia
[3] Inst Teknol Bandung, Res Ctr Nanosci & Nanotechnol, Bandung 40132, Indonesia
来源
关键词
D O I
10.1088/1742-6596/739/1/012050
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Perovskite based solar cells have attracted interest as low-cost and high-efficiency solar cells due to their great performance, with efficiency up to 20.1%. One type of hole transport material (HTM) used in perovskite based solar cells is copper iodide (CuI) thin film. CuI is inexpensive and has high mobility compared to other HTMs commonly used in perovskite based solar cells. However, diisopropylsulfide solvent, which is used to dissolve CuI in the preparation process, is a malodorous and toxic compound. Therefore, the objective of this research was to develop a synthesis method for CuI thin film with in-situ spraying, a low-cost, safe and easy fabrication method. As precursor solution, CuSO4 center dot 5H(2)O was dissolved in ammonia and KI aqueous solution. The precursor solution was then sprayed directly onto a glass substrate with appropriate temperature to form CuI film. The prepared thin films were characterized by X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscope and four-point probes to study their properties.
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页数:6
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