Anisotropic optical spin Hall effect in semiconductor microcavities

被引：37
|
作者：
Amo, A. [1 ,2 ]
Liew, T. C. H. [3 ]
Adrados, C. [1 ,2 ]
Giacobino, E. [1 ,2 ]
Kavokin, A. V. [4 ,5 ]
Bramati, A. [1 ,2 ]
机构：
[1] Univ Paris 06, Ecole Normale Super, Lab Kastler Brossel, F-75252 Paris 05, France
[2] Univ Paris 06, CNRS, F-75252 Paris 05, France
[3] Natl Univ Singapore, Ctr Quantum Technol, Singapore 117543, Singapore
[4] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England
[5] Univ Roma Tor Vergata, Marie Curie Chair Excellence Polarit Devices, I-00133 Rome, Italy
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 16期
关键词：
POLARIZATION; INJECTION; MAGNETIZATION; DYNAMICS; LIGHT; GAAS;
D O I：
10.1103/PhysRevB.80.165325
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Propagating, directionally dependent, polarized spin currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of anisotropy results in suppression or enhancement of the pseudospin precession of polaritons scattered in specific directions. This is exploited to create intense spin currents by excitation on top of localized defects. A theoretical model considering the influence of the total effective magnetic field on the polariton pseudospin quantitatively reproduces the experimental observations.
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页数：6
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