Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

被引：0

作者：

Kale, Abhijit ^{[1
]}

Beese, Emily ^{[2
]}

Saenz, Theresa ^{[3
]}

Warren, Emily ^{[4
]}

Nemeth, William ^{[4
]}

Young, David ^{[4
]}

Marshall, Alexander ^{[5
]}

Florent, Karine ^{[5
]}

Kurinec, Santosh K. ^{[5
]}

Agarwal, Sumit ^{[1
]}

Stradins, Pauls ^{[4
]}

机构：

[1] Colorado Sch Mines, Golden, CO 80401 USA

[2] Harvey Mudd Coll, Claremont, CA 91711 USA

[3] Purdue Univ, W Lafayette, IN 47907 USA

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

[5] Rochester Inst Technol, Rochester, NY 14623 USA

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

METALLIZATION;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

引用

页码：2913 / 2916

页数：4

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