Valence Band Offset at MoO3/CdTe Interface Probed by X-ray Photoelectron Spectroscopy

被引：0
|
作者：
Paudel, N. R. [1 ]
Yan, Y.
机构：
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
来源：
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年
关键词：
CdTe; VBO; MoO3; Cu-free; back contact; solar cells; XPS; TELLURIDE;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CdTe-based thin-film solar cells fabricated with Cufree MoO3/Au back contacts have achieved cell efficiencies as high as 14%. The incorporation of MoO3 buffer layers improves the open circuit voltage but reduces the fill factor (FF) of the CdTe cells compared to the cells using Au-only contacts. X-ray photoelectron spectroscopy measurements suggest a 2.75+/-0.20 eV valence band offset (VBO) between CdTe and MoO3. Such a large VBO explains the decrease in FF with the increase of the thickness of the MoO3 buffer layer.
引用
收藏
页码：2397 / 2399
页数：3
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