Angular dependent magnetoresistance in organic spin valves

被引：5

作者：

Xia, Huayan ^{[1
]}

Zhang, Sangjian ^{[1
]}

Li, Hao ^{[1
]}

Li, Tianli ^{[1
]}

Liu, Fang ^{[1
]}

Zhang, Wenchao ^{[1
]}

Guo, Wang ^{[1
]}

Miao, Tian ^{[2
,3
,4
]}

Hu, Wenjie ^{[2
,3
]}

Shen, Jian ^{[2
,3
]}

Gao, Yongli ^{[1
,5
]}

Yang, Junliang ^{[1
]}

Fang, Mei ^{[1
]}

机构：

[1] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Supermicrostruct & Ultrafast Proces, Changsha 410083, Hunan, Peoples R China

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[4] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Ctr Spintron & Quantum Syst, Xian 710049, Peoples R China

[5] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

来源：

RESULTS IN PHYSICS | 2021年 / 22卷

基金：

中国国家自然科学基金;

关键词：

Organic spin valve; Magnetoresistance; Angular dependence; Magnetization; Domain-switch; SPINTRONICS; INTERFACE; TRANSPORT;

D O I：

10.1016/j.rinp.2021.103963

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertical organic spin valve (OSV)-based organic spintronic devices with additional degree of freedom to utilize and control the magnetoresistance (MR) by spin of electrons, have attracted a lot of interests for both foundation science and future functional device applications. Herein the effects of temperature, bias voltage and direction of magnetic field on the MR of the OSV are investigated to disclose the mechanisms. Specifically, the MR shows angular dependence with the value tuned from negative to positive by rotating the field direction from in-plane to out-of-plane, corresponding to the angular dependent spin moment. A domain-switch model is proposed to simulate the resistance changes in OSV device. The research provides a new route to tune the MR in organic spintronic devices, which is significant for future functional device applications.

引用

页数：6

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