Low-temperature atmospheric ambient rapid lamp cleaning of silicon surfaces

被引：0

作者：

Roman, P ^{[1
]}

Tsai, CL ^{[1
]}

Hengstebeck, R ^{[1
]}

Pantano, C ^{[1
]}

Berry, J ^{[1
]}

Kamieniecki, E ^{[1
]}

Ruzyllo, J ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING | 2000年 / 99卷 / 36期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This experiment is concerned with control of organic contaminants accumulated on the silicon surface during wafer storage using white fight illumination from a halogen lamp in ambient air. The results obtained using TOF-SIMS, contact angle and surface charge measurements indicate effective removal of surface organic contaminants using this treatment. The effectiveness of this method was demonstrated to be comparable to UV/oxygen exposure and thermal annealing using a hot plate.

引用

页码：145 / 149

页数：5

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