A transient-electroluminescence study on perovskite light-emitting diodes

被引：59
|
作者：
Xu, Mengmeng [1 ,2 ]
Peng, Qiming [1 ,2 ]
Zou, Wei [1 ,2 ]
Gu, Lianghui [1 ,2 ]
Xu, Lei [1 ,2 ]
Cheng, Lu [1 ,2 ]
He, Yarong [1 ,2 ]
Yang, Ming [1 ,2 ]
Wang, Nana [1 ,2 ]
Huang, Wei [1 ,2 ,3 ]
Wang, Jianpu [1 ,2 ]
机构：
[1] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, KLOFE, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
[2] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, IAM, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
[3] NPU, SIFE, 127 West Youyi Rd, Xian 710072, Shaanxi, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 04期
基金：
中国国家自然科学基金;
关键词：
ELECTRON TRANSPORTING MATERIALS; SINGLE-LAYER; MOBILITY; TIME;
D O I：
10.1063/1.5099277
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We carried out transient-electroluminescence (Tr-EL) studies on multiple-quantum-well (MQW)-based perovskite light-emitting diodes (PeLEDs). The Tr-EL shows a short onset time (tau(d) similar to 0.1 mu s) and rising time (tau(r) similar to 0.15 mu s), demonstrating high carrier mobility in the MQW perovskites. The electron-mobility in the MQW perovskites was evaluated to be on the order of 10(-5) cm(2) V-1 s(-1). When the pulses are turned off, the Tr-EL decays to zero in around 1 mu s, indicating a low trap density in the MQW perovskites which was estimated to be on the order of 10(15)cm(-3). Besides, the Tr-EL enables us to study the EL properties of PeLEDs at intense current densities, with the results showing that both the Auger recombination and Joule heating are the main causes of the efficiency droop at current densities of tens of ampere per centimeter square.
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页数：4
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