High-Frequency Capacitance-Voltage Characteristics of N-Type Metal-Oxide-Semiconductor Capacitor Based on Strained-Si/SiGe Architecture

被引：1

作者：

Wang, Bin ^{[1
]}

Zhang, He-Ming ^{[1
]}

Hu, Hui-Yong ^{[1
]}

Shu, Bin ^{[1
]}

Zhang, Yu-Ming ^{[1
]}

Song, Jian-Jun ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 06期

基金：

高等学校博士学科点专项科研基金;

关键词：

C-V CHARACTERISTICS; GATE CAPACITANCE; ANALYTICAL-MODEL; HETEROJUNCTION; PARAMETERS; EXTRACTION; MOSFETS; DEVICES;

D O I：

10.7567/JJAP.52.064201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An accumulation metal-oxide-semiconductor (MOS) capacitor plays a key role in RF integrated circuits owing to its high linearity and independence of the operation frequency. The high-frequency capacitance-voltage (C-V) characteristics of a strained-Si/SiGe N-type MOS (NMOS) capacitor were studied to explain a measured behavior in which a "plateau" in the accumulation region was observed. By physically deriving the model of the NMOS capacitor, it was found that this plateau is substrate-doping-dependent and can also be strongly affected by the strained-Si layer thickness. The results from the model were compared with the experimental results and found to be in excellent agreement, indicating the validity of the model. The proposed model can provide valuable reference to the strained-Si device design and has been implemented in the software for extracting the parameter of a strained-Si MOSFET. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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