1.3-μm dual- wavelength DFB laser chip with modulation bandwidth enhancement by integrated passive optical feedback

被引：2
|
作者：
Guo, Fei [1 ]
Lu, Dan [1 ]
Guo, Lu [1 ]
Liu, Songtao [1 ]
Zhao, Wu [1 ]
Wang, Hao [1 ]
Zhang, Ruikang [1 ]
Kan, Qiang [1 ]
Ji, Chen [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China
来源：
OPTICS EXPRESS | 2016年 / 24卷 / 25期
基金：
中国国家自然科学基金;
关键词：
ARRAY; FABRICATION; SPEED;
D O I：
10.1364/OE.24.028869
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a 1.3-mu m dual-wavelength distributed feedback (DFB) photonic integrated chip with modulation bandwidth enhancement using integrated optical feedback section. The dual-wavelength DFB lasers were realized using the upper separate confinement heterostructure (SCH) selective area growth (SAG) approach. A modified butt-joint technique was also adopted to achieve high-quality active-passive interface and minimize unintentional intra-cavity optical feedbacks. The fabricated photonic chip exhibited stable single mode operations with a wavelength separation of 2.06 nm. The 3-dB modulation bandwidth was enhanced through the photon-photon resonance effect with f(3dB) > 17 GHz and open eyes up to 25 Gbit/s for both channels were also obtained. The design can also be scaled up to higher channel counts and higher data rate. (C) 2016 Optical Society of America
引用
收藏
页码：28870 / 28877
页数：8
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