Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors

被引：7
|
作者：
Nava, F
Vanni, P
Canali, C
Vittone, E
Polesello, P
Biggeri, U
Leroy, C
机构：
[1] Univ Modena, Dipartimento Fis, I-41100 Modena, Italy
[2] Ist Nazl Fis Nucl, I-40126 Bologna, Italy
[3] Univ Modena, Diparitmento Sci Ingn, I-41100 Modena, Italy
[4] INFM, Modena, Italy
[5] Univ Turin, Dipartimento Fis, Turin, Italy
[6] Ist Nazl Fis Nucl, I-10125 Turin, Italy
[7] Univ Florence, Dipartimento Energet, Florence, Italy
[8] Ist Nazl Fis Nucl, I-50125 Florence, Italy
[9] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期
关键词：
plasma effect; proton irradiated GaAs detectors; charge collection efficiency;
D O I：
10.1016/S0168-9002(98)01490-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The radiation damage in 100 mu m thick Schottky diodes made on semi-insulating undoped GaAs materials, were studied using alpha-, beta-, proton- and gamma-spectroscopy as well as I-V measurements. The results have been analysed within the framework of the Hecht model to investigate the influence of the plasma produced by short-range strongly ionising particles on the detector performance after 24 GeV proton irradiation. It has been found that with the mean free drift lengths for electrons and holes determined from alpha-spectra in overdepleted detectors, the charge collection efficiency for beta-particles, cce(beta), is well predicted in the unirradiated detectors, while in the most irradiated ones, the cce(beta) is underestimated by more than 40%. The observed disagreement can be explained by assuming that the charge carrier recombination in the plasma region of such detectors, becomes significant. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：185 / 191
页数：7
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