Submicron particle removal in post-oxide chemical-mechanical planarization (CMP) cleaning

Particle removal models for soft-pad buffing (the second-step polishing with DI water) and mechanical brush-cleaning processes are proposed and the removal forces are evaluated and compared with the average particle adhesion force to the oxide wafer surface resulting from the primary polishing (the first-step polishing with slurry). The hydrodynamic force due to the fluid flow is too small to remove slurry particles by itself and particles are most likely removed from the surfaces by the pad or brush asperity contact forces and the hydrodynamic drag force together. This conclusion is consistent with the experimental observations.